First reported 2026-10-18 by Seoul newspaper, relayed same-day by Reuters
Samsung to Use TSMC 3nm for Base Dies of Nvidia Custom HBM
Reuters, citing a Seoul newspaper, reported on October 18, 2026 that Samsung Electronics will use TSMC's 3-nanometre process to fabricate the base (logic) dies for Nvidia's next-generation custom high-bandwidth memory, an unusual foundry-memory crossover that places a key HBM component on TSMC logic capacity. Separately, TSMC confirmed on its Q3 2026 earnings call that it will add another 3nm fab in Tainan with production in 1H 2028, held 2026 CapEx at $60–64B, and said demand still far exceeds supply capacity, while its second Arizona fab completed construction with mass production pulled ahead to Q3 2027.
Routing Nvidia's custom-HBM base dies through TSMC N3 tightens the coupling between HBM supply and leading-edge logic/advanced-packaging capacity, adding a new foundry dependency to the memory BOM but improving base-die performance and integration with CoWoS. Buyers should model HBM lead times as partly gated by TSMC N3 allocation from 2027 onward rather than by DRAM fab capacity alone.
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Sources
- Reuters — Samsung to use TSMC technology for Nvidia's next-generation memory chips, Seoul newspaper reports
- The Next Web — TSMC record profit jumps 69% as it plans another 3nm fab in Tainan
- India's News.Net — TSMC sees robust AI demand after record quarterly profit
- CNBC — Semiconductor market to remain solid 'at least through next year,' South Korea finance minister says
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